In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretationSubmitted by Caspar_admin on Fri, 10/31/2014 - 14:39
Liu, X. Thadesar, P.A., Taylor, C.L., Oh, H.Kunz, M., Tamura, N., Bakir, M.S., and Sitaraman, S.K. "In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffracton exploring the physics behind data interpretation." Applied Phyiscs Letter, September 2014, Vol. 105, Iss. 11, 112109
In-situ microscale thermomechanical strain measurements have been performed in combination with synchrotron x-ray microdiffraction to understand the fundamental cause of failures in microelectronics devices with through-silicon vias. The physics behind the raster scan and data analysis of the measured strain distribution maps is explored utilizing the energies of indexed reflections from the measured data and applying them for beam intensity analysis and effective penetration depth determination. Moreover, a statistical analysis is performed for the beam intensity and strain distributions along the beam penetration path to account for the factors affecting peak search and strain refinement procedure.