Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through Silicon Vias
Submitted by Caspar_admin on Tue, 10/03/2017 - 13:50Citation:
Liu, X., Thadesar, P. A., Taylor, C. L., Kunz, M., Tamura, N., Bakir, M. S., and Sitaraman, S. K., “Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through Silicon Vias,” IEEE Transactions on Components, Packaging, and Manufacturing Technology, Vol. 6, No. 7, July 2016, pp. 993-999.
Abstract:
In this paper, a 3-D thermomechanical model of
through-silicon vias (TSVs) has been analyzed and verified with
in situ microscale strain measurements by synchrotron X-ray
microdiffraction. Thereafter, a comprehensive stress/strain analysis
on copper pumping and back-end-of-line (BEOL) cracking
issues has been carried out. In addition, a design-of-experimentsbased
approach has been used to understand the effect of various
parameters on copper pumping and BEOL stress. The results
show that the smaller TSV diameter and thinner silicon die help
reduce the copper pumping and thus mitigate BEOL stress
Link to Paper:
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7389346